TN8R01 no.7650-1/4 features ? original control ic for delay rcc-type. ? high voltage power mosfet with current sense. ? overload protection. ? only few external components required. ? small full-isolation package : to-220fi5h. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v ds 800 v drain current (dc) i d 2.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 7.5 a ic input voltage v in 30 v allowable power dissipation p d 2.0 w tc=25 c25w operating temperature topr --25 to +125 c junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v delay =0 800 v zero-gate voltage drain current i dss v ds =800v, v delay =0 1.0 ma cutoff voltage v gs (off) v ds =10v, i d =1ma 3.0 4.0 v static drain-to-source on-state resistance r ds (on) i d =1.3a, v delay =15v 3.9 5.2 w input capacitance ciss v ds =20v, f=1mhz 670 pf output capacitance coss v ds =20v, f=1mhz 105 pf [ic] restriction of drive voltage v in(ov) i in =1ma, v fb =0 30 v detection voltage of feedback and v fb v delay, v in =10v, i in =50ma 2.0 v overload amplifier 13004 ts im ta-100807 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan TN8R01 expd (excellent power device) switching regulator ic for rcc method power supplies applications ordering number : enn7650
TN8R01 no.7650-2/4 recommend operating conditions at ta=25 c parameter symbol conditions ratings unit ic input voltage v in 10 to 25 v operating frequency f osc 20 to 200 khz package dimensions unit : mm 2226 block diagram pin definitions and functions pin no. symbol function 1 fb input for feedback voltage and current sense 2 delay input for timing signal 3 drain power mosfet drain 4 vin input for start-up voltage and drive voltage 5 source (gnd) power mosfet source (ground) source (gnd) drain fb vin delay 4 2 3 5 1 sense mos p.mos detection of timing signal restriction of drive voltage feedback and overload amplifier 1 : fb 2 : delay 3 : drain 4 : vin 5 : source sanyo : to-220fi5h 4.5 2.8 10.0 3.2 13.3 10.3 (5.3) (4.0) 6.0 16.0 7.2 3.5 (0.9) 2.4 1.5 3.0 6.5 0.7 0.9 2.54 2.54 1.27 1.27 0.5 2.54 2.54 1.27 1.27 12 45 3
TN8R01 no.7650-3/4 circuit function diagram [feedback control] [semi-regulated control] 5 4 3 2 1 + + error detection gnd v out snubber circuit drive circuit input compensation resistor timing capacitor feedback control capacitor v in (ac) start-up resistor resonant capacitor pin definitions 1:fb 2 : delay 3 : drain 4 : vin 5 : source (gnd) 5 4 3 2 + + + gnd v out snubber circuit drive circuit timing capacitor v in (ac) resonant capacitor start-up resistor 1 feedback control capacitor input compensation resistor error detection pin definitions 1:fb 2 : delay 3 : drain 4 : vin 5 : source (gnd)
TN8R01 no.7650-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of january, 2004. specifications and information herein are subject to change without notice. ps 0 0.5 1.0 1.5 2.5 2.0 0 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it06504 40 20 100 120 60 80 140 160 0 30 25 20 15 10 5 0 40 20 100 120 60 80 140 160 0.01 2 0.1 2 1.0 3 5 7 3 5 7 2 10 3 5 7 2 1.0 23 57 10 23 57 100 23 57 1000 forward bias aso drain-to-source voltage, v ds -- v drain current, i d -- a it06509 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w it06510 operation in this area is limited by r ds (on). <10 m s 100 m s 10 m s 1ms 10ms 100ms dc operation i d =2.5a i dp =7.5a ta=25 c single pulse
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